| PART |
Description |
Maker |
| KU3600N10W |
N CHANNEL TRENCH MOS FIELD
|
Korea Electronics (KEC)
|
| KU3600N10W KU3600N10W-15 |
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR
|
KEC(Korea Electronics)
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| KU310N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU024N06P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS086N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU047N08P KU047N08P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU024N06P |
N-ch Trench MOS FET
|
KEC
|
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
